| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystalline silicon thin-film semiconductor device reducing off-leak current, having good current rise characteristics. <P>SOLUTION: This thin-film transistor having an amorphous silicon layer and a crystalline silicon layer as semiconductor layers is characterized in that the current rise characteristics are improved because a drain electrode is made to directly touch the crystalline silicon layer of the semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
