| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor, in which the number of masks is reduced. SOLUTION: A thin film transistor is manufactured as follows: a first conductive film 102, an insulating film 104, a semiconductor film 106, an impurity semiconductor film 108, and a second conductive film 110 are stacked; a resist mask 112 having a recess is formed thereover by using a multi-tone mask; a thin-film stack body is formed with first etching; a gate electrode layer 116A is formed by executing second etching including side etching to a film 113 in which an etched first conductive film 102 is etched; and then a source electrode and a drain electrode or the like are formed. A crystalline semiconductor film 106 is used for the semiconductor film. COPYRIGHT: (C)2011,JPO&INPIT |
