发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a TFT (Thin Film Transistor) without using a mask pattern that uses a resist composition and to manufacture a display device using the TFT. SOLUTION: The method of manufacturing the display device employs a roll-to-toll system, and the method comprises: a step in which an insulating resin film with an opening is formed on a flexible substrate by a first liquid drop discharging means in which a plurality of discharge outlets for a composition are arranged in a uniaxial direction; a step in which a gage electrode is formed in the opening by a second liquid drop discharging means in which a plurality of discharge outlets for the composition are arranged in the uniaxial direction; and a step in which a gate insulating film is formed on the gate electrode and on the insulating resin film by a film forming means having a nozzle body in which a plurality of discharging ports for plasma are arranged in the uniaxial direction. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2010250327(A) |
申请公布日期 |
2010.11.04 |
申请号 |
JP20100110438 |
申请日期 |
2010.05.12 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
G09F9/30;G02F1/1368;G09F9/00;H01L21/205;H01L21/288;H01L21/3065;H01L21/3205;H01L21/336;H01L27/32;H01L29/786;H01L51/40;H01L51/56 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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