| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device having a capacitor with a structure suitable for a large capacity. SOLUTION: The semiconductor integrated device has: a first electrode layer 13 electrically separated by an element isolation layer 12; an inter-electrode insulating film 14 formed on the first electrode layer 13 and element isolating layer 12, which has an opening 14a exposed by the first electrode layer 13; a first electrode part 15a of a second electrode layer 15 formed on the inter-electrode insulating film 14, which is electrically connected to the first electrode layer 13 through the opening 14a; a second electrode part 15b of the second electrode layer 15 electrically separated from the first electrode part 15a; and a third electrode part 15c of the second electrode layer 15 that extends into the element isolation layer 12 starting from the bottom surface of the second electrode part 15b above the element isolating layer 12 and going through the inter-electrode insulating film 14 and facing the side surface of the first electrode layer 13, wherein it forms: a first capacitive element C1 for holding the inter-electrode insulating film 14 between the first electrode layer 13 and the second electrode part 15b; and a second capacitive element C2 for holding the element isolating layer 12 between the side surface of the first electrode layer 13 and the third electrode part 15c. COPYRIGHT: (C)2011,JPO&INPIT
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