| 摘要 |
The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the bottom electrode plate layer including a titanium layer and a titanium nitride layer formed on the titanium layer is formed using a first and a second physical vapor deposition (PVD) processes at a temperature ranging from 25 to 400° C., and then a first capacitor dielectric layer, a middle electrode plate layer, a second capacitor dielectric layer, and a top electrode plate layer are formed on the bottom electrode plate layer in an order from bottom to top.
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