| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a highly ordered porous silicon in which porous silicon can be stably produced without causing breakage nor damage to a silicon base, pores of high aspect ratio can be obtained, and even porous silicon having large area can be easily produced. <P>SOLUTION: Porous silicon 4 is produced by: carrying out dry etching in a state wherein a porous alumina film 2 is fixed to a surface of the silicon base 1 to form hollows 3 on the surface of the silicon base 1 in the same array with pores of the porous alumina film 2; and carrying out electrolytic etching in an aqueous solution containing hydrofluoric acid, using the silicon base 1 as an anode to form pores by selectively dissolving the hollows 3. <P>COPYRIGHT: (C)2011,JPO&INPIT |
