| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an LDMOS transistor and a scaled MOS transistor actualized through a minimum number of process steps as compared with conventional manufacturing methods, and to provide a method of manufacturing the same. SOLUTION: After a sidewall 27 is formed, only a sidewall of a gate electrode sidewall in an LDMOS source region opened corresponding a resist pattern 28 is removed, and high-density diffusion layers of source and drain regions of the LDMOS and the scaled MOS are formed at the same time to simplify the steps, thereby reducing the cost. COPYRIGHT: (C)2011,JPO&INPIT |
