发明名称 |
NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE |
摘要 |
A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40μm or more.
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申请公布号 |
US2010278205(A1) |
申请公布日期 |
2010.11.04 |
申请号 |
US20100836211 |
申请日期 |
2010.07.14 |
申请人 |
SHARP KABUSHIKI KAISHA;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ITO SHIGETOSHI;YUASA TAKAYUKI;UETA YOSHIHIRO;TANEYA MOTOTAKA;TANI ZENPEI;MOTOKI KENSAKU |
分类号 |
H01S5/343;H01L21/20;H01S5/02;H01S5/22;H01S5/323 |
主分类号 |
H01S5/343 |
代理机构 |
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地址 |
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