发明名称 SEMICONDUCTOR DEVICE
摘要 A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
申请公布号 US2010277996(A1) 申请公布日期 2010.11.04
申请号 US20080028538 申请日期 2008.02.08
申请人 RENESAS TECHNOLOGY CORP. 发明人 TAKEMURA RIICHIRO;ITOH KIYOO;SEKIGUCHI TOMONORI;SAKATA TAKESHI;KIMURA KATSUTAKA
分类号 G11C7/06;G11C11/406;G11C11/4074;G11C11/4091 主分类号 G11C7/06
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