| 摘要 |
An inductively coupled plasma-generating source electrode and a substrate-processing apparatus comprising same are disclosed. The present invention provides a plasma-generating source electrode (360) for generating an inductively coupled plasma (ICP) for substrate processing, comprising: a bent portion (362) having one or more bent points; a first electrode unit (361) arranged above a substrate (10) to be processed, and extending from the bent portion (362); and a second electrode unit (363) arranged below the substrate (10), and extending from the bent portion (362), the substrate being centered between said two electrode units. According to the present invention, uniform plasma density can be obtained over the whole area of the substrate to be processed, and signal attenuation can be prevented. |
