TUNNELING MAGNETIC RESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY CELL AND RANDOM ACCESS MEMORY USING THE ELEMENT

摘要

Provided is a nonvolatile magnetic memory including a tunneling magnetic resistance effect element of a high output, to which a recording layer of a high heat stability is applied, and a writing method of a spin transfer torque is applied to the nonvolatile magnetic memory.  The tunneling magnetic resistance effect element (1) is constituted to have a magnetically recording layer made of a body-centered cubic structure containing Co, Fe and B and including a first ferromagnetic layer (303), a second ferromagnetic layer (301), a first non-magnetic film (302), a first diffusion layer (3022) and a second diffusion layer (3021), and to have a magnetically fixed layer (3051) laminated on the magnetically recording layer through a MgO insulating film (304) having a rock salt structure of a (100) orientation.