<p>In order to reduce memory power consumption during operation and standby, a memory block (MB) including a variable resistance memory element comprises: an address transformation circuit (ATC) for performing a conversion between a logical address and a physical address on the basis of an address transformation table (ATT); and a bank control circuit (BCC) for individually controlling the power supplies to memory banks (BANK). The ATC performs the address conversion, for example, so that external memory accesses are localized to a specific BANK. Consequently, an unused BANK can be secured and the power supply to the periphery circuit of the unused BANK can be blocked through the BCC.</p>
