发明名称 PRECHARGE METHOD OF SEMICONDUCTOR MEMORY DEVICE FOR CONTORLLING PRECHARGE STARTING TIME OF EACH BANK AT BANK PRECHARGE OPERATION AND SEMICONDUCTOR MEMORY DEVICE USING IT
摘要 PURPOSE: A precharging method for a semiconductor memory device and the semiconductor memory device using the same are provided to perform a precharge operation by reducing a power noise by differently controlling a precharge operation point at each bank according to a write sequence. CONSTITUTION: A bank selector(2) activates corresponding row decoder among a plurality of row decoders(3) in response to a bank address. A column decoder designates a specific row of a memory cell array(5). The memory cell array includes a sense amplifier unit comprised of a plurality of sense amplifiers. A command decoder(6) outputs a bank precharge command and all precharge commands. A precharge controller(7) outputs a row decoder by activating a plurality of final precharge signals.
申请公布号 KR20100117874(A) 申请公布日期 2010.11.04
申请号 KR20090036571 申请日期 2009.04.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHU, YONG GYU;JEONG, WOO PYO
分类号 G11C11/4074;G11C5/14 主分类号 G11C11/4074
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