| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition and a method for forming a resist pattern by using the positive resist composition. <P>SOLUTION: The positive resist composition comprises a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of an acid, and an acid generator component (B) which generates an acid upon exposure. When a resist film formed on a support by using the positive resist composition is subjected to selective exposure and development to form a hole pattern, followed by a bake treatment, a bake treatment temperature (Tf) at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 100°C; and when a resist film formed on a support by using the positive resist composition is subjected to selective exposure and development to form a hole pattern, followed by flood exposure on the entire face and then by a bake treatment, a bake treatment temperature (Tf') at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 18°C lower than the Tf. <P>COPYRIGHT: (C)2011,JPO&INPIT |
