SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device that easily obtain desired electrical characteristics and a method of manufacturing the semiconductor substrate. SOLUTION: The method of manufacturing a semiconductor substrate includes: a first epitaxial layer forming process S1 that forms a first epitaxial layer; a trench forming process S2 that forms a trench in the first epitaxial layer; and epitaxial layer forming processes S3, S4, and S5 that form an epitaxial layer in the first epitaxial layer and the trench using two or more growth conditions including different growth speeds so as to fill in the trench and make a dopant concentration taken into the epitaxial layer under each two or more growth conditions constant. COPYRIGHT: (C)2011,JPO&INPIT