| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve luminance and light emission efficiency of an LED device. <P>SOLUTION: The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-conductivity type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-conductivity type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-conductivity type metal electrodes and the second-conductivity type metal electrodes may be alternately arranged and the distances between each first-conductivity type metal electrode and its adjacent second-conductivity type metal electrodes may be substantially equal. <P>COPYRIGHT: (C)2011,JPO&INPIT |
