| 摘要 |
<P>PROBLEM TO BE SOLVED: To allow accurate control of a pattern drawing position with respect to a photomask, a semiconductor device, and a charged beam drawing apparatus. <P>SOLUTION: Charged beam control data are produced by: performing simulation of drawing with a charged beam on the basis of pattern data to divide a drawing area into a completely drawn area wherein drawing has been completed before drawing of respective correction points set to the drawing area, and an undrawn area wherein drawing is not performed; using pattern data belonging to the completely drawn area to derive first charge amount distributions due to a fogging effect around respective correction points, by correction point; deriving second charge amount distributions resulting from correcting the first charge amount distributions, by correction point on the basis of an effect that the charge amount due to the fogging effect is reduced at a position irradiated with the charged beam; deriving amounts of pattern position deviation at respective correction points on the basis of the second charge amount distributions; and deriving correction parameters of pattern positions on the basis of the amounts of pattern position deviation. <P>COPYRIGHT: (C)2011,JPO&INPIT |
