| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device by a small number of processes, and to relax a field concentration in the vicinity of a gate electrode. SOLUTION: First and second insulating films 13 and 15 are sequentially formed on a foundation 11, a first opening pattern and the first insulating film are exposed from a surface in the second insulating film and a second opening pattern having a length along the first direction of an opening end shorter than the first opening pattern is formed. A second opening 21 continuing from the first opening and having the length along the first direction at the opening end shorter than the first opening 19 and a foundation surface continuing from the second opening are exposed by partially removing the first insulating film from an exposed surface from the first opening 19 and the first and second opening patterns by expanding the first opening pattern along the thickness direction. A third opening 23 having the length along the first direction at the opening end shorter than the second opening is formed, and an opening 17 for forming an electrode containing the first to third openings is embedded while the electrode coating the surface of the second insulating film in the periphery of the opening for forming the electrode is formed. COPYRIGHT: (C)2011,JPO&INPIT
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