发明名称 Method of Fabricating Zinc Oxide Film Having Matching Crystal Orientation to Silicon Substrate
摘要 A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.
申请公布号 US2010279461(A1) 申请公布日期 2010.11.04
申请号 US20090434638 申请日期 2009.05.02
申请人 ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGYRESEARCH 发明人 YANG TSUN-NENG
分类号 H01L21/20;H01L21/205 主分类号 H01L21/20
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