| 发明名称 |
METHOD FOR TRANSFERRING A LAYER FROM A DONOR SUBSTRATE ONTO A HANDLE SUBSTRATE |
| 摘要 |
The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.
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| 申请公布号 |
US2010279487(A1) |
申请公布日期 |
2010.11.04 |
| 申请号 |
US20100712938 |
申请日期 |
2010.02.25 |
| 申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, S.A. |
发明人 |
KERDILES SEBASTIEN;SCHWARZENBACH WALTER;ALAMI-IDRISSI AZIZ |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
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