SHORT CHANNEL TRANSISTOR WITH REDUCED LENGTH VARIATION BY USING AMORPHOUS ELECTRODE MATERIAL DURING IMPLANTATION

摘要

In sophisticated transistor elements, enhanced profile uniformity along the transistor width direction may be accomplished by using a gate material (212) in an amorphous state, thereby reducing channeling effects and line edge roughness. In sophisticated high-k metal gate approaches, an appropriate sequence may be applied to avoid a change of the amorphous state prior to performing the critical implantation processes for forming drain and source extension regions (204) and halo regions (205).