A random access memory (RAM) cell provides a control section and a storage section coupled to the storage section. The storage section includes complementary metal-oxide semiconductor (CMOS) transistors and the storage section is read by pre-charging the control section to a virtual drain voltage.
申请公布号
WO2010080923(A3)
申请公布日期
2010.11.04
申请号
WO2010US20387
申请日期
2010.01.07
申请人
CALIFORNIA INSTITUTE OF TECHNOLOGY;MOORE, CHRISTOPHER D.;KELLER, SEAN J.;MARTIN, ALAIN J.
发明人
MOORE, CHRISTOPHER D.;KELLER, SEAN J.;MARTIN, ALAIN J.