METHOD FOR MANUFACTURING GALLIUM NITRIDE FILM SEPARATED FROM SUBSTRATE BY EPITAXY

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride (GaN) film by the epitaxial adhesion of GaN.

SOLUTION: The manufacture a gallium nitride film having a reduced defect density includes an at least one step of epitaxial lateral-direction growth, and includes a step of separating one portion of a GaN layer from a GaN substrate by using an embrittlement performed by the direct injection into the GaN substrate. Further, the manufacture includes a photo-electric component and an electronic component which have the film obtained by the foregoing method and have the gallium nitride film.

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