| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a contact electrode which has high adhesive strength without causing the peeling of an electrode of a p-type ZnO-based compound semiconductor and has satisfactory ohmic contact, to provide the ZnO-based semiconductor device in which the electrode is formed, and to provide a method of manufacturing the ZnO-based semiconductor device. <P>SOLUTION: The method of manufacturing the ZnO-based semiconductor device includes: a step of forming a contact metal layer containing at least one of Ni and Cu on a p-type ZnO-based semiconductor layer; and a heat treatment step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region between the p-type ZnO-based semiconductor layer and the contact metal layer while maintaining a metal phase layer on a surface of the contact metal layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
