摘要 |
<p><P>PROBLEM TO BE SOLVED: To compensate for reduction in power supply voltage at the time of executing a command in a memory device with command control. <P>SOLUTION: The semiconductor memory device has a controller, a memory device in which various controls are carried out for various commands from the controller, and a generator circuit to supply power to the memory device. The voltage potentials of the generator circuit are set to various voltage potentials corresponding to the commands to be input to the memory device. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |