| 发明名称 |
METHOD OF FORMING PATTERN OF INSULATING RESIN FILM ON SURFACE OF SUBSTRATE AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a pattern of an insulating resin film on a surface of a substrate by cutting and a semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device includes: a first step of forming the insulating resin film (3) on a main surface side so that a connection electrode (2) is covered, in a semiconductor substrate (1) on the main surface of which the connection electrode (2) is formed; and a second step of forming an aperture (31) comprising a tapered portion (10) and a connecting portion (21) so that the connecting portion (21) of the connection electrode (2) is exposed through cutting by a byte (4) whose rake angle is zero or negative. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2010251695(A) |
申请公布日期 |
2010.11.04 |
| 申请号 |
JP20090237509 |
申请日期 |
2009.10.14 |
| 申请人 |
DENSO CORP |
发明人 |
TOMISAKA MANABU;FUKUDA YUTAKA;AKAMATSU KAZUO;TAI AKIRA;KAMEYAMA MICHIO;FUKAYA TERUKAZU;KATO KAZUTO |
| 分类号 |
H01L21/768;B23D1/00;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/768 |
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