发明名称 |
TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a trench substrate that reduces a plating deviation, and a method of manufacturing the trench substrate. SOLUTION: The trench substrate includes a base substrate 102; an insulating layer 112 formed on one or both surfaces of the base substrate 102 and having a circuit region therein and having a trench formed in a dummy region of a product edge; and a circuit layer 124 including a circuit pattern and a via formed in the interior of the trench formed in the circuit region by a plating step. Trenches are formed in the dummy region of the product edge and in a cutting region between products to improve a plating deviation, thereby improving a deviation between plating layers formed on the insulating layer in a plating step. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010251676(A) |
申请公布日期 |
2010.11.04 |
申请号 |
JP20090115606 |
申请日期 |
2009.05.12 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO LTD |
发明人 |
KO YON GYAN;WATANABE RYOICHI;LEE SANG SOO |
分类号 |
H05K3/22;H05K1/02;H05K3/00;H05K3/18 |
主分类号 |
H05K3/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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