发明名称 TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a trench substrate that reduces a plating deviation, and a method of manufacturing the trench substrate. SOLUTION: The trench substrate includes a base substrate 102; an insulating layer 112 formed on one or both surfaces of the base substrate 102 and having a circuit region therein and having a trench formed in a dummy region of a product edge; and a circuit layer 124 including a circuit pattern and a via formed in the interior of the trench formed in the circuit region by a plating step. Trenches are formed in the dummy region of the product edge and in a cutting region between products to improve a plating deviation, thereby improving a deviation between plating layers formed on the insulating layer in a plating step. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010251676(A) 申请公布日期 2010.11.04
申请号 JP20090115606 申请日期 2009.05.12
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 KO YON GYAN;WATANABE RYOICHI;LEE SANG SOO
分类号 H05K3/22;H05K1/02;H05K3/00;H05K3/18 主分类号 H05K3/22
代理机构 代理人
主权项
地址
您可能感兴趣的专利