| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device superior in resistivity against solder-cracking property, even at such a high-temperature solder reflow processing approximately at 260°C as used for a lead-free solder. <P>SOLUTION: The method of manufacturing the semiconductor device has step (A1) for bonding a metal supporter and a semiconductor element using a thermosetting adhesive composition under a predetermined heating condition A, step (A2) for sealing the supporter and the semiconductor element bonded in the step (A1) by means of a sealing resin, and step (A3) for thermally processing the bonded supporter and element under the predetermined heating condition B after they are sealed at the step (A2). In the manufacturing method, degree of warpage in the thermosetting adhesive composition under a predetermined warpage-evaluation test satisfies a predetermined conditional expression. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
