| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing compound which enables embedded wiring with low dishing, low erosion and few scratches to be formed at high polishing speed through the use of the polishing compound in polishing a substrate, having an insulative film on which a wiring metal film and a barrier film are formed. <P>SOLUTION: The polishing compound includes steps of dissolving a heterocyclic benzene compound, such as benzotriazole, in one or more organic solvents selected from among a group consisting of a primary alcohol having 1 to 4 carbon atoms, a glycol having 2 to 4 carbon atoms, an ether represented by CH<SB>3</SB>CH(OH)CH<SB>2</SB>OC<SB>m</SB>H<SB>2m+1</SB>, wherein m is an integer of 1 to 4, N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide,γ-butyloractone and propylene carbonate; and then mixing the resulting solution with an aqueous dispersion of fine oxide particles as abrasive grains. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
