METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. SOLUTION: The method for manufacturing the semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide layer; adding ions to the silicon substrate to form an embrittlement region in the silicon substrate; bonding the silicon substrate and a base substrate with insulating layers interposed therebetween; heating the silicon substrate and separating the silicon substrate at the embrittlement region to form a stacked layer of the silicon carbide layer and a silicon layer over the base substrate with the insulating layers interposed therebetween; and removing the silicon layer to expose a surface of the silicon carbide layer. COPYRIGHT: (C)2011,JPO&INPIT