发明名称 ELECTRIC NANODEVICE AND METHOD OF MANUFACTURING SAME
摘要 A nanodevice is disclosed. The nanodevice comprises: a drain region, a source region opposite to the drain region and being separated therefrom at least with a trench, and a gate region, isolated from the drain and the source regions and from the trench. The trench has a height which is between 1 nm and 30 nm.
申请公布号 US2010276669(A1) 申请公布日期 2010.11.04
申请号 US20090811710 申请日期 2009.01.07
申请人 RICHTER SHACHAR;MENTOVICH ELAD;KALIFA ITSHAK 发明人 RICHTER SHACHAR;MENTOVICH ELAD;KALIFA ITSHAK
分类号 H01L29/772;H01L21/335;H01L21/84 主分类号 H01L29/772
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