| 摘要 |
<p>Provided is a nonvolatile storage element which has less operational fluctuation and is capable of stable operation. The nonvolatile storage element is provided with: a first electrode (102); a second electrode (106); a variable resistance layer (105), which is formed between both the electrodes (102, 106), is connected to both the electrodes (102, 106) and reversibly transits between a high resistance state and a low resistance state, corresponding to the polarity of a voltage applied between both the electrodes (102, 106); and a fixed resistance layer (104), which is formed between both the electrodes (102, 106), is electrically connected in parallel with at least a part of the variable resistance layer (105), and has a resistance value within the range of 0.1 to 10 times the resistance value of the variable resistance layer (105) in the high resistance state.</p> |
