| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of luminescence of a semiconductor light emitting device including an InAlGaN semiconductor. <P>SOLUTION: The semiconductor light emitting device 1 includes: a light emitting region 3; a first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor (0≤X1≤1) layer 5; and a second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor (0≤X2≤1) layer 7. In the semiconductor light emitting device 1, the light emitting region 3 is made of a group III nitride semiconductor, and includes an InAlGaN semiconductor layer. The first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5 is doped with a p-type dopant, such as magnesium (Mg), and is provided on the light emitting region 3. The second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor layer 7 includes a p-type dopant concentration smaller than that of the first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5. The second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor layer 7 is provided between the light emitting region 3 and the first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5. <P>COPYRIGHT: (C)2011,JPO&INPIT |
