发明名称 DRIVE CIRCUIT FOR INDUCTIVE LOAD
摘要 <p>An inductive load (12) is disposed between a midpoint (P1) between a first and a second transistor (14, 16) connected in series and a midpoint between a third and a fourth transistor (15, 17) connected in series. A protective resistor is disposed between sources or emitters of the first and third transistors (14, 15) and a direct-current power supply (Vcc), and a sensing resistor (R2) is disposed between low-potential sides of the second and fourth transistors (14, 17) and ground. The first and third transistors (14, 15) are driven through input of drive signals, each having a fixed potential, to gates or bases thereof. The drive signals from the drive means are turned off when, during powering of the inductive load (12), a voltage applied to the sensing resistor (R2) is continuously equal to or lower, for a predetermined period of time or longer, than a threshold value for ground short detection. Breakdown of the first and third transistors(14, 15) on account of ground shorts is thus prevented by way of a simple circuit.</p>
申请公布号 EP2246968(A1) 申请公布日期 2010.11.03
申请号 EP20090712300 申请日期 2009.02.16
申请人 SHIMA SEIKI MANUFACTURING., LTD. 发明人 TAKASHITA, SHOSHI
分类号 H02M1/32;H02M7/48;H02M7/5387 主分类号 H02M1/32
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