Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product.,申请号EP20080015374-传众专利搜索

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发明名称	Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product.
摘要
申请公布号	EP2045358(A3)	申请公布日期	2010.11.03
申请号	EP20080015374	申请日期	2008.09.03
申请人	NAEBAUER, ANTON	发明人	NAEBAUER, ANTON
分类号	C23C16/44;C23C16/455	主分类号	C23C16/44
代理机构		代理人
主权项
地址

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