发明名称 Coupled resonator device, method for manufacturing a coupled resonator device and wafer compound
摘要 <p>A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.</p>
申请公布号 GB2459549(B) 申请公布日期 2010.11.03
申请号 GB20090003443 申请日期 2009.02.27
申请人 AVAGO TECHNOLOGIES WIRELESS IP 发明人 MARTIN HANDTMANN;KLAUS-GUENTER OPPERMANN;MARTIN FRITZ
分类号 H03H9/205;H03H3/02;H03H9/58 主分类号 H03H9/205
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