发明名称 |
GALLIUM NITRIDE EPITAXIAL WAFER, AND METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
<p>A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.</p> |
申请公布号 |
EP2131388(A4) |
申请公布日期 |
2010.11.03 |
申请号 |
EP20080711671 |
申请日期 |
2008.02.20 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIZUMI, YUSUKE;UENO, MASAKI;NAKAMURA, TAKAO |
分类号 |
H01L33/16;H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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