发明名称 NITROGEN OXIDE SENSITIVE FIELD EFFECT TRANSISTORS FOR EXPLOSIVE DETECTION COMPRISING FUNCTIONALIZED NON-OXIDIZED SILICON NANOWIRES
摘要 <p>An apparatus for detecting volatile compounds derived from explosive materials with very high sensitivity. The apparatus is composed of field effect transistors of non-oxidized silicon nanowires modified with specific functional groups including, in particular, amine, imine and/or carboxyl moieties. Further a system is provided comprising the apparatus in conjunction with learning and pattern recognition algorithms and methods of use thereof for detecting and quantifying specific explosive compounds.</p>
申请公布号 EP2245446(A1) 申请公布日期 2010.11.03
申请号 EP20090711973 申请日期 2009.02.18
申请人 TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD. 发明人 HAICK, HOSSAM
分类号 G01N27/414;G01N33/00;G01N33/22 主分类号 G01N27/414
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