Semiconductor memory device, and method of controlling the same

摘要

A semiconductor memory device comprises an internal voltage generator (18) which, when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator (18) consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit (14) inactivates the internal voltage generator (18). When the internal voltage generator (18) is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator (18) is exemplified by a booster (28) for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator (34) for generating a substrate voltage, or a precharging voltage generator (30) for generating the precharging voltage of bit lines to be connected with the memory cells. During the low power consumption mode, an external voltage supplying circuit supplies a power supply voltage supplied from the exterior as the internal voltage to a predetermined internal circuit. Even when the internal voltage generator (18) is inactivated, therefore, the power supply voltage is supplied to the power supply terminal of each internal circuit, which results in preventing a leak path.