| 发明名称 |
Electrode structure for semiconductor device, manufacturing method and apparatus for the same |
| 摘要 |
<p>A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two or three element solder used conventionally is disclosed. A solder alloy making layer (8) for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer (5). The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer (6) composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.</p> |
| 申请公布号 |
EP1223613(B1) |
申请公布日期 |
2010.11.03 |
| 申请号 |
EP20020000876 |
申请日期 |
2002.01.15 |
| 申请人 |
NEC CORPORATION |
发明人 |
TAGO, MASAMOTO;NISHIYAMA, TOMOHIRO;TAO, TETUYA;MIKAGI, KAORU |
| 分类号 |
H01L21/60;H01L23/485 |
主分类号 |
H01L21/60 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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