发明名称 |
Semiconductor device including a MOS transistor and a production method therefor |
摘要 |
<p>It is intended to provide a semiconductor device including a MOS transistor, comprising: a pillar-shaped semiconductor layer (205a,205b); one of drain and source regions which is formed underneath the pillar-shaped semiconductor layer to serve as a first drain/source region (203); a gate electrode (208) formed around a sidewall of the pillar-shaped semiconductor layer through a first dielectric film (207); an epitaxial semiconductor layer formed on top of an upper surface of the pillar-shaped semiconductor layer; and a remaining one of the drain and source regions which is formed so as to be at least partially in the epitaxial semiconductor layer to serve as a second drain/source region (209a,209b), wherein an area of an upper surface of the second drain/source region is greater than an area of the upper surface of the pillar-shaped semiconductor layer.</p> |
申请公布号 |
EP2246893(A2) |
申请公布日期 |
2010.11.03 |
申请号 |
EP20100004492 |
申请日期 |
2010.04.28 |
申请人 |
UNISANTIS ELECTRONICS (JAPAN) LTD. |
发明人 |
MASUOKA, FUJIO;ARAI, SHINTARO |
分类号 |
H01L29/78;H01L21/336;H01L21/8238;H01L21/84;H01L29/08;H01L29/417;H01L29/49;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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