发明名称 Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package
摘要 A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.
申请公布号 US7825495(B2) 申请公布日期 2010.11.02
申请号 US20080007920 申请日期 2008.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RYU SEUNG-KWAN;CHOI HEE-KOOK;SIM SUNG-MIN;JANG DONG-HYEON
分类号 H01L29/06 主分类号 H01L29/06
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