发明名称 |
Method of fabricating semiconductor device having gate spacer layer with uniform thickness |
摘要 |
A method of fabricating a semiconductor device having a gate spacer layer with a uniform thickness wherein a gate electrode layer pattern is formed on a substrate and ion implantation processes of respectively different doses are formed on side walls of the gate electrode layer patterns in respective first and second regions of the substrate. A first gate spacer layer is formed on the gate electrode layer pattern where the ion implantation process is performed. A second gate spacer layer is formed on the first gate spacer layer.
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申请公布号 |
US7824975(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080164677 |
申请日期 |
2008.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JOUNG YONG SOO;ROUH KYOUNG BONG;SEO HYE JIN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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