| 发明名称 |
High performance metal gate polygate 8 transistor SRAM cell with reduced variability |
| 摘要 |
A static random access memory cell includes a metal hi-k layer; a poly-SiON gate stack over the metal hi-k layer; a plurality of inverters disposed within the poly-SiON gate stack; and a plurality of field effect transistors placed in the metal hi-k layer.
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| 申请公布号 |
US7826251(B2) |
申请公布日期 |
2010.11.02 |
| 申请号 |
US20080125637 |
申请日期 |
2008.05.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;SLEIGHT JEFFREY W. |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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