发明名称 |
CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same |
摘要 |
A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.
|
申请公布号 |
US7825438(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20060463317 |
申请日期 |
2006.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG JONG-WAN;LEE DUCK-HYUNG |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|