| 摘要 |
There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InxGa1−xN, where 0<x<0.2, and GaN; a well layer including InxGa1−xN, where 0<x<1; a third barrier layer including one of InxGa1−xN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of AlxInyGa1−x−yN, where 0<x<1, 0<y<1, and 0<x+y<1, AlxGa1−xN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.
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