发明名称 |
Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor |
摘要 |
An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.
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申请公布号 |
US7826247(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080078385 |
申请日期 |
2008.03.31 |
申请人 |
PANASONIC CORPORATION |
发明人 |
MURAOKA SHUNSAKU;OSANO KOICHI;TAKAHASHI KEN;SHIMOTASHIRO MASAFUMI |
分类号 |
G11C11/00;G11C11/56;G11C13/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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