发明名称 |
Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit |
摘要 |
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.
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申请公布号 |
US7825013(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080122892 |
申请日期 |
2008.05.19 |
申请人 |
QIMONDA AG |
发明人 |
GOLDBACH MATTHIAS;HENKE DIETMAR;SCHMIDBAUER SVEN |
分类号 |
H01L21/20;H01L29/04;H01L31/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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