Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same,申请号US20070772082-传众专利搜索

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发明名称	Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
摘要
申请公布号	US7824956(B2)	申请公布日期	2010.11.02
申请号	US20070772082	申请日期	2007.06.29
申请人	SANDISK 3D LLC	发明人	SCHRICKER APRIL;HERNER BRAD;CLARK MARK
分类号	H01L29/02	主分类号	H01L29/02
代理机构		代理人
主权项
地址

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