发明名称 Non-volatile memory device and method of operating the same
摘要 A non-volatile memory device is disclosed. The non-volatile memory device includes an encoder configured to set random data in a unit of a word line, and generate second data to be programmed in a memory cell by performing logic operation about the random data and first data inputted for program, and a data converting circuit configured to have a decoder for generating the first data by performing logic operation about the second data read from the memory cell and the random data.
申请公布号 US7826277(B2) 申请公布日期 2010.11.02
申请号 US20080138503 申请日期 2008.06.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SHIN TAE HO;YANG JOONG SEOB;CHUNG JUN SEOP;KIM YOU SUNG
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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